Author:
Van Den Boogaard M. J.,Jones S. J.,Chen Y.,Williamson D. L.,Hakvoort R. A.,Van Veen A.,Van Der Steege A. C.,Bik W. M. Arnold,Van Sark W. G. J. H. M.,Van Der Weg W. F.
Abstract
ABSTRACTWe have used small-angle X-ray scattering (SAXS) and Doppler-broadening measurements of positron-annihilation radiation to study changes in the microvoid distribution in PECVD a-Si:H films during annealing. From a comparison of data on deuterium diffusion with information obtained from SAXS we conclude that changes, during annealing, in the dispersive character of deuterium diffusion are likely to be caused by void formation through clustering of smaller structural defects.
Publisher
Springer Science and Business Media LLC
Cited by
5 articles.
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