Evidence for structural relaxation in measurements of hydrogen diffusion in rf-sputtered boron-dopeda-Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.6746/fulltext
Reference23 articles.
1. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
2. Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon
3. Connection between the Meyer-Neldel relation and multiple-trapping transport
4. Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous silicon
5. Hydrogen diffusion in amorphous silicon
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1. Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials;Physical Review B;2006-02-13
2. Microstructure and hydrogen dynamics in hydrogenated amorphous silicon carbides;Physical Review B;1999-12-15
3. Hydrogen Phenomena in Hydrogenated Amorphous Silicon;Semiconductors and Semimetals;1999
4. Mechanism for hydrogen diffusion in amorphous silicon;Physical Review B;1998-01-15
5. Defect Equilibration in Amorphous Silicon Films Submitted to High Intensity Illumination;MRS Proceedings;1996
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