Author:
Van Den Boogaard M. J.,Van Der Steege A. C.,Van Sark W. G. J. H. M.,Van Der Weg W. F.
Abstract
ABSTRACTWe have annealed PECVD a-Si:H films at 250, 300, and 350°C and measured the evolution of the infrared absorption spectrum. We observe that, during the initial stage of such a heat treatment, atomic hydrogen migrates from the isolated state to the clustered state. Thus diffusion of atomic hydrogen must occur around 300°C. Microvoids with internal surfaces covered with SiH bonds appear to be more stable than voids lined with SiH2 bonds and (SiH2)n polymers.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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