Etching Selectivity of SiF4 and H2 Plasmas for c-Si, a-Si:H and SiO2

Abstract

ABSTRACTThe etching of a-Si:H, c-Si and SiO2 in glow discharges of SiF4 and H2 was studied. The order of the etch rates in a SiF4 plasma is a-Si:H > c-Si > SiO2. The etch rates of these materials are nearly independent of temperature. Only a-Si:H is etched in a H2 plasma.