Grain Boundary Migration and Grain Growth Induced by Electromigration in Copper and Aluminum Lines-Reference-Cited by-同舟云学术

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Grain Boundary Migration and Grain Growth Induced by Electromigration in Copper and Aluminum Lines

Published:1995 Issue: Volume:391 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Gladkikh A.,Glickman E.,Karpovsky M.,Lereah Y.,Palevski A.,Shubert J.

Abstract

AbstractThe changes of microstructure in Al and Cu thin film lines due to electromigration have been studied using transmission electron microscopy. Grain boundary migration, inclination and dislocation activity were found to be critically involved in the electromigration induced hillock formation that can be described as three dimensional grain growth.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference10 articles.

1. Electromigration and mechanical stress in aluminium conductor tracks passivated by anodisation

2. Activation energy for electromigration in Cu films

3. Electromigration in Cu/W Structure

4. Diffusion induced grain boundary migration

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electromigration reliability issues in dual-damascene Cu interconnections;IEEE Transactions on Reliability;2002-12

2. In-Situ Electromigration Damage of Al Interconnect Lines and the Influence of Grain Orientation;MRS Proceedings;1999

3. Texture and Grain Boundary Structure Dependence of Hillock Formation in Thin Metal Films;MRS Proceedings;1998-01

4. Diffusional creep as a stress relaxation mechanism in electromigration;Journal of Applied Physics;1998-01

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