Abstract
AbstractThe effects of implanted ion chemistry and displacement damage on the amorphization threshold dose of SiC were studied using cross-section transmission electron microscopy. Room temperature as well as 200 and 400°C irradiations were carried out with 3.6 MeV Fe, 1.8 MeV Cl, 1 MeV He or 0.56 MeV Si ions. The room temperature amorphization threshold dose in irradiated regions well separated from the implanted ions was found to range from 0.3 to 0.5 dpa for the four different ion species. The threshold dose for amorphization in the He, Si and Fe ion-implanted regions was also σ0.3 to 0.5 dpa. On the other hand, the amorphization threshold in the Climplanted region was only about 0.1 dpa. The volume change associated with amorphization was σ17&. No evidence for amorphization was obtained in specimens irradiated at 200 or 400°C.
Publisher
Springer Science and Business Media LLC
Cited by
8 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC;Applied Surface Science;2019-11
2. Recrystallization of He-ion implanted 6H-SiC upon annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2015-02
3. Spectra study of He-irradiation induced defects in 6H-SiC;Acta Physica Sinica;2014
4. Optical and structural properties of 6H–SiC irradiated by coimplantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-10
5. Thermal conductivity of SiC after heavy ions irradiation;Journal of Nuclear Materials;2010-01