New Growth Chemistries and Techniques in Metal-Organic Vapor Phase Epitaxy

Abstract

ABSTRACTThe metal-organic vapor phase epitaxy (MOVPE) technique is perhaps themost versatile of the conventional III–V growth epitaxial systems. This versatility stems from the wide variety of chemical precursors available for the growth and doping of the films. Two examples of this versatility, carbon doping and selective epitaxy, are presented. Future progress within this technology will continue to be driven by the development of new chemistries.