Use of thin carbon films for selective chemical etching and epitaxial deposition of III‐V semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88633
Reference5 articles.
1. Embedded heterostructure epitaxy: A technique for two‐dimensional thin‐film definition
2. Universal stain/etchant for interfaces in III‐V compounds
3. Optical striplines for integrated optical circuits in epitaxial GaAs
4. On the direct contact between overgrowth and substrate through amorphous carbon layers
5. Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence
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2. Selective epitaxy of GaAs, AlxGa1−xAs, and InxGa1−xAs;Journal of Crystal Growth;1991-01
3. References;Thin Films by Chemical Vapour Deposition;1990
4. Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs;Applied Physics Letters;1989-03-06
5. New Growth Chemistries and Techniques in Metal-Organic Vapor Phase Epitaxy;MRS Proceedings;1988
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