Hydrogen Incorporation During Deposition of a-Si:H From an Intense Source of SiH3-Reference-Cited by-同舟云学术

Hydrogen Incorporation During Deposition of a-Si:H From an Intense Source of SiH3

Published:1997 Issue: Volume:467 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Van De Sanden M. C. M.,Severens R. J.,Kessels W. M. M.,Van De Pas F.,Van Ijzendoorn L.,Schram D. C.

Abstract

ABSTRACTThe incorporation of hydrogen during the fast deposition of a-Si:H from an expanding thermal arc is investigated by means of isotope labeling of the precursor gases silane and hydrogen. It is found that hydrogen in a-Si.H originates dominantly from the silyl radical. A small fraction of the hydrogen in a-Si:H is due to exchange reaction of atomic hydrogen in the plasma with hydrogen chemisorbed on the surface during growth.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

1. Mechanism of surface reaction in the deposition process ofa-Si:H by rf glow discharge

2. Chiang C.-M. , Gates S.M. , Lee S.S. , Kong M. and Bent S.F. , submitted for publication

3. High energy ion scattering and recoil spectrometry in applied materials science

4. Atomic H abstraction of surface H on Si: An Eley–Rideal mechanism?

5. A Defect Density of ∼ 1014 cm-3 in Hydrogenated Amorphous Silicon Deposited at High Substrate Temperatures

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