Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films-Reference-Cited by-同舟云学术

Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films

Published:2001-10 Issue:5-6 Volume:120 Page:243-248
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Daouahi M,Ben Othmane A,Zellama K,Zeinert A,Essamet M,Bouchriha H

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference42 articles.

1. Some properties of hydrogenated amorphous silicon produced by direct reaction of silicon and hydrogen atoms

2. Influence of hydrogen on vibrational and optical properties ofa-Si1−xHxalloys

3. Preparation and properties of amorphous silicon produced by a consecutive, separated reaction chamber method

4. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering

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