In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1321793
Reference36 articles.
1. In situ ellipsometry of thin-film deposition: Implications for amorphous and microcrystalline Si growth
2. Insituspectroellipsometric study of the nucleation and growth of amorphous silicon
3. Investigation of the Surface Morphology of a-Si:H by Atomic Force Microscopy and In-Situ Ellipsometry
4. In situ Ellipsometric Studies of the growth of a-Si:H films Prepared by the Hot wire Deposition
5. Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates
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