Mechanism of surface reaction in the deposition process ofa-Si:H by rf glow discharge
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.10635/fulltext
Reference27 articles.
1. Spatial Distribution of SiH3Radicals in RF Silane Plasma
2. Temperature dependence of the sticking and loss probabilities of silyl radicals on hydrogenated amorphous silicon
3. In situ characterization of the growing a-Si:H surface by IR spectroscopy
4. Argon sputtering analysis of the growing surface of hydrogenated amorphous silicon films
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