In situ characterization of the growing a-Si:H surface by IR spectroscopy-Reference-Cited by-同舟云学术

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In situ characterization of the growing a-Si:H surface by IR spectroscopy

Published:1991-01 Issue: Volume:137-138 Page:765-770
ISSN:0022-3093
Container-title:Journal of Non-Crystalline Solids
language:en
Short-container-title:Journal of Non-Crystalline Solids

Author:

Toyoshima Yasutake,Arai Kazuo,Matsuda Akihisa,Tanaka Kazunobu

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Guiding Principle in the Preparation of High-Photosensitive Hydrogenated Amorphous Si-Ge Alloys from Glow-Discharge Plasma

2. Mat. Res. Soc. Symp. Proc.;Abelson,1991

3. In SituIR Spectroscopic Study of a-Si:H Films Growing under Photo-Chemical Vapor Deposition Condition

4. Real timeinsituobservation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

5. Real‐time detection of higher hydrides on the growing surface of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy

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