Interfacial Reactions of Titanium Thin Films on P+-Implanted (001)Si

Abstract

ABSTRACTInterfacial reactions of titanium thin films on P+-implanted silicon have been studied by transmission electron microscopy.The presence of titanium thin films on P+-implanted silicon was found to alter the defect configuration in the recrystallized layer. Interfacial reactions of titanium thin films on silicon were also found to be influenced by the presence of dopants as well as changes in the microstructures of the substrate. The results are compared with those found in previous studies of Ti thin films on ion-implanted silicon as well as on unimplanted samples. The mechanisms for the chaiiges in defect configuration and phase formation are discussed.