Author:
Skorupa W.,Grotzschel R.,Wollschlagbr K.,Albrbcht J.,Vohse H.
Abstract
ABSTRACTWe report on the formation and properties of a new type of a buried insulator using combined nitrogen/oxygen implantation with two different implantation energies. In this manner, a stacked layer consisting of silicon dioxide above silicon oxynitride above silicon nitride is formed. Experimental results concerning the impurity profiles, the microstructure and compound formation are presented.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ion Beam Processing for Silicon-on-Insulator;Physical and Technical Problems of SOI Structures and Devices;1995