Heavy metal gettering in buried nitride silicon-on-insulator structures
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19880314?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Proximity gettering of transition metals in separation by implanted oxygen structures;Applied Physics Letters;1995-11-13
2. Ion Beam Processing for Silicon-on-Insulator;Physical and Technical Problems of SOI Structures and Devices;1995
3. Study of silicon-on-insulator structures formed by low dose oxygen and nitrogen implantation;Materials Science and Engineering: B;1992-01
4. TEM study of combined oxygen and nitrogen implanted silicon;Philosophical Magazine A;1991-09
5. Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-04
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