Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes-Reference-Cited by-同舟云学术

Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes

Published:2001 Issue: Volume:671 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Tugbawa Tamba,Park Tae,Lee Brian,Boning Duane

Abstract

ABSTRACTWepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden copper removal stage. The model uses contact mechanics to correctly apportion polishing pressure on all sections of an envelop function that reflects the long-range thickness differences on the chip, or region of interest. With the pressure over the entire envelop known, the density-step-height part of the model is then used to compute the amount of material removed in the local “up-areas” and “down-areas”. ThismodelshowspromiseinaccuratelyandefficientlypredictingpostCMPcopperanddielectric thicknesses across an entire chip.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference5 articles.

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3. [2] Tugbawa T. , Park T. , Boning D. , Camilletti L. , Brongo M. , Lefevre P. ,“AMathematical Model of Pattern Dependencies in Cu CMP Processes,” Electrochemical Society Proceedings of the Third International Symposium on Chemical Mechanical Planarization in IC Device Manufacturing, 99–37, pp. 605-615, 1999

4. [4] Yoshida T. , “Three-Dimensional Chemical Mechanical Polishing Process Model by BEM,” Electrochemical Society Proceedings of the Third International Symposium on Chemical Mechanical Planarization in IC Device Manufacturing, 99-37, pp. 593–604, 1999.

5. Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes

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