Author:
Molnar R. J.,Nichols K. B.,Maki P.,Brown E. R.,Melngailis I.
Abstract
AbstractGallium nitride (GaN) films grown by hydride vapor phase epitaxy on a variety of substrates have been investigated to study what role silicon and oxygen impurities play in determining the residual donor levels found in these films. Secondary ion mass spectroscopy analysis has been performed on these films and impurity levels have been normalized to ion implanted calibration standards. While oxygen appears to be a predominate impurity in all of the films, in many of them the sum of silicon and oxygen levels is insufficient to account for the donor concentration determined by Hall measurements. This suggests that either another impurity or a native defect is at least partly responsible for the autodoping of GaN. Additionally, the variation of impurity and carrier concentration with surface orientation and/or nucleation density suggests either a crystallographic or defect-related incorporation mechanism.
Publisher
Springer Science and Business Media LLC
Cited by
71 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献