New Materials: Gallium Nitride-Reference-Cited by-同舟云学术

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New Materials: Gallium Nitride

Published:2013-02-15 Issue: Volume: Page:
ISSN:
Container-title:Materials Science and Technology
language:
Short-container-title:

Author:

Weber Eicke R.¹²,Kisielowski Christian³

Affiliation:

1. University of California; Department of Materials Science and Engineering; Berkeley CA USA 94720

2. Lawrence Berkeley National Laboratory; Material Science Division; Berkeley CA USA 94720

3. National Center for Electron Microscopy; Lawrence Berkeley National Laboratory; Berkeley CA USA 94720

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/9783527603978.mst0254/fullpdf

Reference182 articles.

1. Intrinsic and Thermal Stress in Gallium Nitride Epitaxial Films

2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

4. Growth and applications of Group III-nitrides

5. Hollow‐anode plasma source for molecular beam epitaxy of gallium nitride

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