Structure and Properties of Silicon Carbide Implanted With Chromium-Reference-Cited by-同舟云学术

Structure and Properties of Silicon Carbide Implanted With Chromium

Published:1981 Issue: Volume:7 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Mchargue C. J.,Williams J. M.

Abstract

ABSTRACTThe effects of implanting chromium at fluences of up to 2.6 × 1016/cm2 on the structure and properties of single- and polycrystalline samples of SiC were studied. The material turned amorphous due to the implantation. The hardness decreased by as much as 25% and the fracture toughness increased by approximately 10% due to the implantation. The most interesting finding was that the material swells by as much as 30% upon implantation of some 2 × 1016 Cr-ions/cm2.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference12 articles.

1. High fluence retention of noble gases implanted in silicon

2. Volume expansion and oxygen incorporation in deuteron-bombarded silicon

3. Disorder produced in SiC by ion bombardment

4. Backscattering Analysis and Electrical Behavior of SiC Implanted with 40 keV Indium

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