High fluence retention of noble gases implanted in silicon-Reference-Cited by-同舟云学术

High fluence retention of noble gases implanted in silicon

Published:1978-01 Issue:2 Volume:39 Page:81-95
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Wittmaack K.,Blank P.,Wach W.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577808237907

Reference44 articles.

1. Range parameter distortion in heavy ion implantation

2. The influence of implanted xenon on the sputtering yield of silicon

3. The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon

4. Wittmaack, K. and Blank, P. Proc. Fifth Int. Conf. Ion Implantation in Semiconductors and Other Materials. Edited by: Chernow, F., Borders, J. A. and Brice, D. K. pp.363New York: Plenum Press.

5. Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The sputtering yield of crystalline Si(1 0 0) surface by monoatomic and diatomic nitrogen ions impact;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-12

2. Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09

3. Preparation and Analysis of Atom Probe Tips by Xenon Focused Ion Beam Milling;Microscopy and Microanalysis;2016-04-08

4. Thermal Desorption Studies of Ar+Implanted Silicon;Acta Physica Polonica A;2014-06

5. Positron annihilation Doppler broadening study of Xe-implanted aluminum;Applied Surface Science;2013-10