Abstract
ABSTRACTThe main drawbacks of the known models of the B diffusion in strained SiGe layers are summarized. A mechanism is suggested to self-consistently explain the main experimental features and original experimental data which considers the trapping of B atoms by Ge atoms during B diffusion in the Si lattice resulting in the retarded B diffusivity. Fluctuations of Ge atom numbers in a nearest B atom environment result in percolation mechanism of B transport through dilatation centers of random size. A new solid state transport modelis generalized by considering dispersion transport of positive and negative point dilatation defects.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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