Author:
Aziz M. J.,Nygren E.,Christie W. H.,White C. W.,Turnbull D.
Abstract
ABSTRACTThe effect of pressure on self diffusion in crystalline silicon is being studied using 30Si as a tracer. Diffusion experiments have been carried out in the pressure range of 1 to 35000 atmospheres at 1000°C. The 30Si is observed to diffuse faster at high pressures, indicating a negative activation volume.
Publisher
Springer Science and Business Media LLC
Cited by
14 articles.
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