Author:
Liliental Z.,Carpenter R.W.,Fathya D.,Kelly J.C.
Abstract
Subsurface dielectric layers in silicon formed by oxygen ion implantation have been the subject of various investigations, as an attractive alternative to building devices and integrated circuits on insulating substrates. More recently, the methods of high resolution analytical electron microscopy (HRAEM) have been applied to the analysi off these buried dielectric layers with significant results.(1,2 When oxygen is implanted into silicon, the interface between the amorphous oxide and the silicon is sharp on an atomic scale, but islands of silicon exist in the oxide for some distance from the interface. The effect is ion implantation condition dependent. Dielectric layers formed by nitrogen ion implantations are expected to be similar to those formed by oxygen implantationbut offer advantages from the materials science viewpoint in terms of thermodynamic stability and mechanical strength.(3,4In this paper we report observations of the structure of silicon after two different implantations conditions which are the first part of an investigation to determine effect of implantation variables on microstructure.
Publisher
Springer Science and Business Media LLC
Reference5 articles.
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5. High resolution analytical electron microscopy
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