Abstract
Structure and composition of interfaces span a wide range in materials science, from grain boundaries to interphase interfaces. Silicon-silicon oxide and various si1 icon-si 1icide interfaces are the most intensively studied to date. In favorable cases where misfit strain is very small and flat boundaries can be examined in cross-section to satisfy the projection approximation, as in nickel silicide-silicon interfaces, the interface bond structure can be determined. In most other cases interfaces are neither homogeneous or flat, and it is useful to also apply microbeam diffraction and spectroscopy to interfacial analysis. For small unit cell crystals, i.e. metals, intermediate voltage HREM is necessary. In this note applications to ion implantation in silicon, composite interfaces, and precipitation in metallic alloys are illustrated.
Publisher
Cambridge University Press (CUP)
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