Author:
Graff K.,Hefner H.-A.,Pieper H.
Abstract
ABSTRACTA new method is presented which is suitable to check gettering processes and to evaluate gettering efficiencies. This method is based on an intentional contamination of the respective silicon wafer by means of palladium or any other haze forming metal. The palladium is diffused and haze is revealed by preferential etching. In order to determine gettering efficiency the sizes of the haze areas on gettered and non-gettered wafers are compared. The quantity of the gettered palladium can be deduced from lateral palladium profiles.In contrast to procedures published in the literature this method is very simple and fast. Therefore it is suitable for routine application to check back side damaged wafers or internal gettering.
Publisher
Springer Science and Business Media LLC
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献