Laser-Assisted Local Etching of Gallium Arsenide

Abstract

ABSTRACTPyrolytic local etching of GaAs using focused Ar laser beams in C12 or CCl4 gas atmospheres has been performed to investigate the possibility of maskless etching processes by laser beams. Etching rates from 0.3 to 40 μ/scan with an etched linewidth down to 5 μ were obtained. In the case of CC1 4 , a carbon line buried in GaAs was obtained for a single scan of a laser beam at a pressure above 80 Torr with low scanning speeds or at a pressure above 120 Torr.