Laser chemical etching of vias in GaAs
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/55/31886/01483383.pdf?arnumber=1483383
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Through-wafer via fabrication in gallium arsenide by excimer laser projection patterned etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-09
2. Laser-assisted thermally enhanced InP via etching for microwave device applications;IEEE Transactions on Semiconductor Manufacturing;1993
3. Analysis of laser-assisted chemical etching processes of a pinhole by monitoring diffraction patterns of reflected beams;Applied Optics;1992-12-20
4. Laser‐projection‐patterned etching of GaAs in a chlorine atmosphere;Journal of Applied Physics;1992-03-15
5. A comparative study of the adsorption of CH2Cl2, CH3I and CH2I2 on GaAs(100) surfaces at 300 K;Vacuum;1990-01
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