A Novel Method of Fabricating SiC-On-Insulator Substrates for Use in MEMS

Abstract

ABSTRACTThis paper reports on a novel, bonding-free method to fabricate silicon carbide-on-insulator (SiCOI) substrates. The process bypasses wafer bonding by using a high deposition rate polysilicon process in conjunction with wet chemical etching to produce wafer-thick polysilicon layers that serve as substrates for the SiCOI structures. Because wafer bonding is not used, insulators of various material types and thickness can be used. Using this method, transfer percentages over 99% are readily achievable. Various applications could benefit from this technology, including high temperature SiC-based microelectromechanical systems (MEMS) and SiC electronic devices.