Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates-Reference-Cited by-同舟云学术

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Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates

Published:1992-01 Issue:1-4 Volume:11 Page:125-129
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Pazik J.C.,Kelner G.,Bottka N.,Freitas J.A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates

2. Growth of improved quality 3C‐SiC films on 6H‐SiC substrates

3. Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy

4. Silicon films on sapphire

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation of stress-controlled, highly textured, α-SiC thin films at 950 °C;Journal of Applied Physics;2012-07

2. A Novel Method of Fabricating SiC-On-Insulator Substrates for Use in MEMS;MRS Proceedings;2001

3. Role of SIMOX defects on the structural properties of β-SiC/SIMOX;Materials Science and Engineering: B;1999-07

4. State of the art of 3C-SiC/silicon on insulators;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05

5. Chapter 2 SiC Fabrication Technology: Growth and Doping;Semiconductors and Semimetals;1998

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