Assessment of GaAs heteroepitaxial films grown on silicon‐on‐sapphire upgraded by double solid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102208
Reference14 articles.
1. Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy
2. Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
3. Molecular beam epitaxial growth of lattice‐mismatched In0.77Ga0.23As on InP
4. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates
5. Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si
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1. Improvement of Crystalline Quality in GaAs Layer Grown on Thermal Cyclic Annealed SOS;Journal of the Society of Materials Science, Japan;2011
2. Improved solid phase epitaxial growth of lithium tantalate thin films on sapphire, using a two‐step metalorganic chemical‐vapor deposition process;Applied Physics Letters;1993-11-08
3. Solid‐phase epitaxial growth of lithium tantalate thin films deposited by spray‐metalorganic chemical vapor deposition;Applied Physics Letters;1993-07-19
4. Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates;Materials Science and Engineering: B;1992-01
5. Epitaxial growth of β‐SiC on silicon‐on‐sapphire substrates by chemical vapor deposition;Applied Physics Letters;1991-04
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