Observation of antiphase domain boundaries in GaAs on silicon by transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100021
Reference19 articles.
1. Epitaxial GaAs on Si: Progress and Potential Applications
2. Epitaxial GaAs on Si: Progress and Potential Applications
3. Epitaxial GaAs on Si: Progress and Potential Applications
4. The growth of GaAs on Si by MBE
5. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
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3. Transmission electron microscopy observation of crystal twinning in periodically inverted AlGaAs grown by low-temperature molecular beam epitaxy;Japanese Journal of Applied Physics;2018-09-07
4. Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001);Journal of Crystal Growth;2016-09
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