The Effect of Surface Structure on the Epitaxial Growth of Si on CoSi2(111)

Abstract

ABSTRACTTwo distinctively different structures were found on CoSi2(111), the CoSi2-C and the CoSi2-S, which correspond to, respectively, an essentially bulk-terminated surface and one which consists of an additional Si double layer. Details of the two structures suggest new growth techniques for Si epitaxy. Single crystal Si layers with either identical orientation as the silicide or a 180°-rotated orientation can be fabricated by use of carefully designed Si templates.