Author:
Adamski C.,Meiser S.,Uffmann D.,Niewöhner L.,Schäffer C.
Abstract
ABSTRACTThe growth of epitaxial CoSi2 by means of SPE on heavily ion implanted Si(111) was investigated with LEED, RBS and TEM. After silicide formation, the dopant distribution in silicide and silicon was determined by means of SIMS. In a self-aligned process epitaxial CoSi2/Si p+ contacts have been produced. The specific contact resistance was found to be lower than for polycrystalline CoSi2 contacts.
Publisher
Springer Science and Business Media LLC