Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices-Reference-Cited by-同舟云学术

Deep Level Transient Spectroscopy: Defect Characterization in Semiconductor Devices

Published:1986 Issue: Volume:69 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Johnson N. M.

Abstract

AbstractThe use of deep-level transient spectroscopy for electronic defect characterization in semiconductors is reviewed with emphasis on the underlying principles and concepts.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference64 articles.

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1. Chapter 2 Defect Identification Using Capacitance Spectroscopy;Semiconductors and Semimetals;1999

2. Hole trap generation by thermal treatment of nitrogen doped p-type ZnSe on GaAs characterized by deep level transient spectroscopy;Applied Physics Letters;1997-10-13

3. Deep level defects in GaAs on Si substrates grown by atomic hydrogen‐assisted molecular beam epitaxy;Journal of Applied Physics;1996-10-15

4. High resolution method for the analysis of admittance spectroscopy data;Journal of Applied Physics;1995-04-15

5. Shallow and Deep Level Defects in GaN;MRS Proceedings;1995