Chapter 2 Defect Identification Using Capacitance Spectroscopy
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Elsevier
Reference137 articles.
1. Recoil implantation of radioactive transition metals and their investigation in silicon by deep-level transient spectroscopy;Achtziger;Appl. Phys. Lett.,1995
2. Identification of Se2 and Se-As pairs in silicon by elemental transmutation;Achtziger;Phys. Rev. Lett.,1995
3. Statistical mechanics or band states and impurity states in semiconductors;Almbladh;J. Phys. C: Solid Stute Phys.,1981
4. Interstitial defect reactions in silicon;Asom;Appl. Phys. Lett.,1987
5. Influence of series resistance of a diode on transient capacitance measurements of deep-level parameters;Astrova;Sov. Phys. Semicond.,1985
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