Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics-Reference-Cited by-同舟云学术

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Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics

Published:2022-03-04 Issue: Volume: Page:
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Container-title:Light-Emitting Devices, Materials, and Applications XXVI
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Author:

Buffolo Matteo,Roccato Nicola,Piva Francesco,De Santi Carlo,Brescancin Riccardo,Casu Claudia,Caria Alessandro,Mukherjee Kalparupa,Haller Camille,Carlin Jean Francois,Grandjean Nicolas,Vallone Marco,Tibaldi Alberto,Bertazzi Francesco,Goano Michele,Verzellesi Giovanni,Mosca Mauro,Meneghesso Gaudenzio,Zanoni Enrico,Meneghini Matteo

Publisher

SPIE

Reference27 articles.

1. Chapter 2 Defect Identification Using Capacitance Spectroscopy

2. [Device Electronics for Integrated devices];Muller,2002

3. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

4. GaN-based power devices: Physics, reliability, and perspectives

5. Tutorial: Defects in semiconductors—Combining experiment and theory

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