Optoelectronic Properties of Pseudomorphic SixGel1−x,/Ge Heterostructures on (001) Ge

Abstract

ABSTRACTThe optical and electronic properties of pseudomorphic SixGel1−x/Ge heterostructures are reviewed in brief. Potential applications of conduction and valence band alignments for modulation doped field effect transistors are outlined. Optical transition energies are calculated for ultra-thin, alternating four monolayer, Si/Ge heterostructures on (001) Ge.