Electronic transitions in a SimGenstrained monolayer superlattice measured by photoreflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103158
Reference22 articles.
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5. Theory of optical transitions in Si/Ge(001) strained-layer superlattices
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Optical Transitions in a Self-Assembled Ge Quantum Dot/Si Superlattice Measured by Photoreflectance Spectroscopy;Japanese Journal of Applied Physics;2005-08-05
2. Optical Properties;Semiconductors and Semimetals;1998
3. Resonant-Raman-scattering study on short-period Si/Ge superlattices;Physical Review B;1994-12-15
4. A MBE on-line optical modulation photoreflectance analysis system;Acta Physica Sinica (Overseas Edition);1994-08
5. Temperature dependences of theE0transitions in bulk Ge and a Ge-rich (Si)m/(Ge)nsuperlattice;Physical Review B;1992-01-15
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