Resonant-Raman-scattering study on short-period Si/Ge superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.50.18211/fulltext
Reference27 articles.
1. Electronic transitions in a SimGenstrained monolayer superlattice measured by photoreflectance
2. Structurally induced optical transitions in Ge-Si superlattices
3. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge
4. Electronic structure of Ge/Si monolayer strained-layer superlattices
5. Electroreflectance study of the E1 and E0 optical transitions in thin Ge/Si superlattices
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1. Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs.ab initiocalculations;Journal of Applied Physics;2017-02-28
2. Electronic and spectroscopic properties of Ge nanocrystals using diamondoid structures: A density functional theory study;International Journal of Modern Physics B;2016-04-20
3. GeSi Raman spectra vs. local clustering/anticlustering: Percolation scheme and ab initio calculations;Journal of Applied Physics;2013-07-21
4. Ellipsometry studies of Si/Ge superlattices with embedded Ge dots;Applied Physics A;2013-05-31
5. SiGe superlattice nanocrystal infrared and Raman spectra: A density functional theory study;Journal of Applied Physics;2012-02-15
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