Diffusion of Hydrogen in 6H Silicon Carbide

Abstract

Abstract6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 °C and 1150 °C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 °C. A diffusion coefficient of ∼10−14 cm2/s is extracted at 800°C with an approximate activation energy of ∼3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900°C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.