Influence of hydrogen implantation on emission from the silicon vacancy in 4H-SiC
Author:
Affiliation:
1. Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, N-0316 Oslo, Norway
2. Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal
Funder
Research Council of Norway
Fundacao para a Ciencia e Tecnologia
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5140659
Reference52 articles.
1. Quantum computing with defects
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5. NV centers in3C,4H, and6Hsilicon carbide: A variable platform for solid-state qubits and nanosensors
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