Point defects in MeV ion-implanted silicon studied by deep level transient spectroscopy
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference31 articles.
1. Buried dopant and defect layers for device structures with high-energy ion implantation
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3. Production of Fast Switching Power Thyristors by Proton Irradiation
4. Localized lifetime control in insulated-gate transistors by proton implantation
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