Author:
Alén Petra,Juppo Marika,Ritala Mikko,Leskelä Markku,Sajavaara Timo,Keinonen Juhani
Abstract
The atomic layer deposition technique was used to deposit TaN thin films from TaCl5 and TaBr5 and tert-butylamine or allylamine as a reductive nitrogen source with and without ammonia. The films were characterized with time-of-flight elastic recoil detection analysis, energy-dispersive x-ray spectroscopy, x-ray diffraction, and the standard four-point probe method. The films deposited from tert-butylamine and ammonia with both tantalum precursors had reasonably low halide contents. When allylamine was used as a nitrogen source, on the contrary, the films contained larger amounts of chlorine and other impurities. The resistivity increased markedly as the deposition temperature was decreased. The lowest resistivities (below 1500 μΩ cm) were obtained when the films were deposited from TaCl5 or TaBr5 with tert-butylamine at 500 °C.
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
35 articles.
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