Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex-Reference-Cited by-同舟云学术

Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex

Published:2016-01 Issue: Volume:362 Page:176-181
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Han Jeong Hwan,Kim Hyo Yeon^ORCID,Lee Sang Chan^ORCID,Kim Da Hye,Park Bo Keun,Park Jin-Seong,Jeon Dong Ju,Chung Taek-Mo,Kim Chang Gyoun

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference31 articles.

1. Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additions

2. Interdiffusions in Cu/reactive‐ion‐sputtered TiN, Cu/chemical‐vapor‐deposited TiN, Cu/TaN, and TaN/Cu/TaN thin‐film structures: Low temperature diffusion analyses

3. Properties of reactively sputter-deposited TaN thin films

4. Evaluation of amorphous (Mo, Ta, W)SiN diffusion barriers for 〈Si〉|Cu metallizations

5. TEM Analyses Of Cu-Ta And Cu-Tan Interfaces

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