Reduction of Strain in Epitaxial GaAs on CaF2/Si Substrates-Reference-Cited by-同舟云学术

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Reduction of Strain in Epitaxial GaAs on CaF2/Si Substrates

Published:1988 Issue: Volume:116 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Hashimoto Shin,Schowalter L.J.,Smith G.A.,Lee E.Y.,Gibson W.M.,Claxton P.A.

Abstract

AbstractThis paper reports on strains in epitaxial GaAs layers grown on CaF2/Si(001) and CaF2/Si(111) heteroepitaxial substrates investigated by MeV 4He+; ion channeling. The results indicate that the CaF2 buffer layers reduce strain in the GaAs.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference8 articles.

1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications

2. Pressure Dependence of the Elastic Constants and an Experimental Equation of State for CaF2

3. Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metalorganic vapor phase epitaxy of GaAs on Si using IIa-flouride buffer layers;Journal of Crystal Growth;1992-11

2. Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report;Journal of Materials Research;1990-04

3. Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD);Journal of Electronic Materials;1990-04

4. GaAs Heteroepitaxy on Substrate-Engineered Silicon Using SixGe1–x Multilayer Structures;MRS Proceedings;1990

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