Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96383
Reference4 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
2. Epitaxial relations in group‐IIa fluoride/Si(111) heterostructures
3. Epitaxial growth and characterization of CaF2on Si
4. Pressure Dependence of the Elastic Constants and an Experimental Equation of State for CaF2
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