GaAs Heteroepitaxy on Substrate-Engineered Silicon Using SixGe1–x Multilayer Structures

Abstract

ABSTRACTThe novel concept of using a SixGe1–x multilayer structure as a buffer layer between a silicon substrate and a GaAs epitaxial layer to accommodate the GaAs/Si 4.1% lattice mismatch is introduced. Initial results using a 340 nm trilayer SixGe1–x multilayer structure are presented and are critically assessed. Significant potential is demonstrated, and the work to date indicates that certain guidelines and procedures must be adhered to for this method of threading dislocation reduction to be effective.