Author:
Geiler H.D.,Kürner W.,Storbeck O.
Abstract
ABSTRACTProcess induced crystal defects in silicon wafers can be detected by their stress fields. The nondestructive photoelasticity based on laser polarimetry is applied to visualize the stress fields of temperture gradient induced lattice defects like sliplines or extended defect areas around boat marks. The quantitative evaluation of the defects allows their characterization by a specific danger potential for further evolution causing upstream problems in IC manufacturing.
Publisher
Springer Science and Business Media LLC
Cited by
12 articles.
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