Simulation of Self-Heating and Temperature Effect in GaN-based Metal-Semiconductor Field-Effect Transistor

Abstract

AbstractTwo-dimensional electro-thermal simulations of GaN-based metal-semiconductor field-effect transistor are performed in the framework of the drift-diffusion model. The dependence of the hot spot temperature in transistors with many gates on the gate-to-gate pitch is studied. The case of SiC substrate is compared to the case of sapphire substrate. The ambient temperature effect on transistor performance is simulated. The specific of a thermal breakdown in GaN-based devices is discussed. The results obtained can be useful for the optimization of the thermal design for field-effect transistors.